Ex Parte Yang et alDownload PDFPatent Trial and Appeal BoardDec 19, 201412626925 (P.T.A.B. Dec. 19, 2014) Copy Citation UNITED STATES PATENT AND TRADEMARKOFFICE UNITED STATES DEPARTMENT OF COMMERCE United States Patent and Trademark Office Address: COMMISSIONER FOR PATENTS P.O. Box 1450 Alexandria, Virginia 22313-1450 www.uspto.gov APPLICATION NO. FILING DATE FIRST NAMED INVENTOR ATTORNEY DOCKET NO. CONFIRMATION NO. 12/626,925 11/29/2009 Yu-Ru YANG 07377UMC-US 3094 84937 7590 12/19/2014 LanWay IPR Services P.O. Box 230970 CENTREVILLE, VA 20120 EXAMINER NADAV, ORI ART UNIT PAPER NUMBER 2811 MAIL DATE DELIVERY MODE 12/19/2014 PAPER Please find below and/or attached an Office communication concerning this application or proceeding. The time period for reply, if any, is set in the attached communication. PTOL-90A (Rev. 04/07) UNITED STATES PATENT AND TRADEMARK OFFICE ____________ BEFORE THE PATENT TRIAL AND APPEAL BOARD ____________ Ex parte YU-RU YANG and CHIEN-CHUNG HUANG ____________ Appeal 2012-011946 Application 12/626,9251 Technology Center 2800 ____________ Before BRADLEY R. GARRIS, GEORGE C. BEST, and KIMBERLY J. McGRAW, Administrative Patent Judges. McGRAW, Administrative Patent Judge. DECISION ON APPEAL Appellants appeal under 35 U.S.C. § 134(a) from a rejection of claims 19–27 under 35 U.S.C. §103(a) as being unpatentable over Kim et al. (2002/0090811 A1 published July 11, 2002) (“Kim”) in view of Lee et al. (5,534,463 issued July 9, 1996) (“Lee”). Ans. 4–13. Claims 1–18 are withdrawn. App. Br. 14. We have jurisdiction under 35 U.S.C. § 6(b). We AFFIRM. BACKGROUND Appellants’ invention is directed to semiconductor devices and more particularly to a damascene structure. Spec. ¶ 4, App. Br. 15 (Claim App’x). 1 According to Appellants, the real party in interest is UNITED MICROELECTRONICS CORP. App. Br. 2. Appeal 2012-011946 Application 12/626,925 2 Claim 19, the only independent claim on appeal, is reproduced below: 19. A damascene structure, comprising: a conductive layer; a first dielectric layer disposed on the conductive layer, the first dielectric layer having a via therein; a first barrier metal layer disposed on the via bottom and the via sidewall in the first dielectric layer, the first barrier metal layer covering the conductive layer on the via bottom; a resistivity-modified barrier layer of metallized materials formed of a material derived from what the first barrier metal layer is formed of, and covering the first barrier metal layer on the via sidewall, as well as outside the via while exposing the first barrier metal layer on the via bottom; a second barrier metal layer covering the resistivity- modified barrier layer of metallized materials on the via sidewall, exposing the first barrier metal layer on the via bottom, wherein the resistivity-modified barrier layer is of different material composition from the second barrier metal layer; and a third barrier metal layer covering the second barrier metal layer on the via sidewall, and covering the first barrier metal layer on the via bottom. App. Br. 15 (Claim App’x) (limitations at issue italicized). ANALYSIS 35 U.S.C. § 112, ¶ 2 The Examiner has maintained the rejection of claims 19–27 under 35 U.S.C. § 112, second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which applicant regards as the invention. The Examiner states that the claim limitation of “wherein the resistivity-modified barrier layer is of different material composition from the second barrier metal layer” is unclear as to how a Appeal 2012-011946 Application 12/626,925 3 material (the material of the resistivity-modified barrier layer) can be different than a layer. Ans. 2. The Appellants do not contest this rejection. Accordingly, this rejection is summarily sustained. See 37 C.F.R. § 41.37(c)(iv). However, for the purposes of addressing the prior art rejection set forth below, we interpret “wherein the resistivity-modified barrier layer is of different material composition from the second barrier metal layer” to mean that the material composition of the resistivity-modified barrier layer is different than the material composition of the second barrier metal layer. 35 U.S.C. § 103(a) The Examiner has maintained the rejection of claims 19–27 under 35 U.S.C. § 103(a) as being unpatentable over Kim and Lee. Ans. 2–6. The Examiner found that the Titanium/Titanium Nitride (“Ti/TiN”) alloy layer 13 of Figure 2E of Kim comprises a two layer structure wherein one layer is formed of Ti and the second layer is composed of TiN. Id. at 3 (citing Kim ¶ 32, 36, claim 2); see also id. at 8. The Examiner found that the Ti layer is “a resistivity-modified barrier layer of metallized materials” and that the TiN layer is a “second barrier metal layer” as required by claim 19. Ans. 3. The Examiner also found that layer 13 of Kim covers the first barrier metal layer 5 on the via sidewall as well as outside the via. Id. The Examiner further found that because layer 13 does not cover layer 5 on the via bottom that Kim teaches a resistivity-modified barrier layer “exposing the first barrier metal layer 5 on the via bottom.” Id. The Examiner also found that the barrier metal layer 9 of Kim covers the second barrier metal layer on the via sidewall as recited in claim 19. Id. Appeal 2012-011946 Application 12/626,925 4 Appellants first argue that the Examiner erred in finding that Kim teaches the resistivity-modified barrier layer or the second barrier layer of claim 19 because a Ti/TiN alloy does not inherently mean that the layer is a Ti/TiN two-layer structure. App. Br. 12. Appellants assert that a Ti/TiN alloy layer may be a single layer Ti/TiN. Id. We disagree. The Examiner found that Ti/TiN is a well-known term of art that is commonly understood by one of ordinary skill in the art as a two-layer structure comprising a first layer of Ti and a second layer of TiN. Ans. 7 (citing Kim ¶¶ 32, 36). Appellants have provided no argument or evidence to rebut the Examiner’s findings. Second, Appellants argue that Kim fails to teach or suggest a “resistivity-modified barrier layer . . . covering the first barrier metal layer on the via sidewall, as well as outside the via while exposing the first barrier metal layer on the via bottom” because layer 13 exposes layer 9 instead of layer 5. App. Br. 12. We disagree. The Examiner found that although layer 13 is not in direct contact with layer 5, that layer 13 still covers (indirectly) the top part of layer 5. Ans. 8. The presence of layer 9 in between layers 5 and 13 does not prevent layer 13 from covering layer 9. See id. at 8–9. Since layer 13 does not cover the bottom part of layer 5, then layer 13 indirectly exposes the bottom part of the layer as claimed. Id. Appellants do not contest the Examiner’s claim construction or provide any argument as to why the Examiner’s findings are in error. Thus, we are not persuaded that the Examiner erred. Third, Appellants argue that Kim does not teach that the third barrier metal layer 9 covers the second barrier metal layer 13 on the via sidewall Appeal 2012-011946 Application 12/626,925 5 because an end of layer 9 is between layer 13 and layer 7. App. Br. 13. We disagree. The Examiner found that the end of layer 9 is in direct contact with layer 13 and thus covers the inner surface of layer 13 on the via sidewall as claimed. Ans. 9. Appellants have not provided any argument as to why the Examiner’s findings are in error. Thus, we are not persuaded that the Examiner erred in finding that Kim teaches a third barrier metal layer covering the second barrier metal layer on the via sidewall as recited in claim 19. For the above reasons, we sustain the Examiner’s rejection of independent claim 19. As Appellants have not separately argued the patentability of the dependent claims, we sustain the Examiner’s rejection of dependent claims 20–27. DECISION The Examiner’s rejection of claims 19–27 under 35 U.S.C. § 112, second paragraph is summarily affirmed. The Examiner’s decision rejecting claims 19–27 under 35 U.S.C. § 103(a) over Kim and Lee is affirmed. No time period for taking any subsequent action in connection with this appeal may be extended under 37 C.F.R. § 1.136(a)(1)(iv). AFFIRMED bar Copy with citationCopy as parenthetical citation