Ex Parte Weidman et alDownload PDFBoard of Patent Appeals and InterferencesJan 25, 201211385038 (B.P.A.I. Jan. 25, 2012) Copy Citation UNITED STATES PATENT AND TRADEMARKOFFICE UNITED STATES DEPARTMENT OF COMMERCE United States Patent and Trademark Office Address: COMMISSIONER FOR PATENTS P.O. Box 1450 Alexandria, Virginia 22313-1450 www.uspto.gov APPLICATION NO. FILING DATE FIRST NAMED INVENTOR ATTORNEY DOCKET NO. CONFIRMATION NO. 11/385,038 03/20/2006 Timothy W. Weidman APPM/009920US02/PPC/ELESS 8743 44257 7590 01/25/2012 PATTERSON & SHERIDAN, LLP - - APPM/TX 3040 POST OAK BOULEVARD, SUITE 1500 HOUSTON, TX 77056 EXAMINER BAREFORD, KATHERINE A ART UNIT PAPER NUMBER 1715 MAIL DATE DELIVERY MODE 01/25/2012 PAPER Please find below and/or attached an Office communication concerning this application or proceeding. The time period for reply, if any, is set in the attached communication. PTOL-90A (Rev. 04/07) UNITED STATES PATENT AND TRADEMARK OFFICE ____________________ BEFORE THE BOARD OF PATENT APPEALS AND INTERFERENCES ____________________ Ex parte TIMOTHY W. WEIDMAN, ARULKUMAR SHANMUGASUNDRAM, KAPILA WIJEKOON, SCHUBERT S. CHU, FREDERICK C. WU, and KAVITA SHAH ____________________ Appeal 2011-000217 Application 11/385,038 Technology Center 1700 ____________________ Before FRED E. McKELVEY, PETER F. KRATZ, and RAE LYNN P. GUEST, Administrative Patent Judges. GUEST, Administrative Patent Judge. DECISION ON APPEAL I. STATEMENT OF CASE Appellants appeal under 35 U.S.C. § 134 from the Examiner’s decision to reject claims 1-38. We have jurisdiction under 35 U.S.C. § 6(b). We AFFIRM. Appellants’ invention relates to a method of depositing a copper- containing material within a feature, such as a via, aperture, trench, or contact, of a semiconductor device using a seed layer prior to electroless plating (Spec. ¶¶ [0002]-[0004] and [0022]). Appellants identify in the Appeal 2011-000217 Application 11/385,038 2 Background section of the Specification that the use of a seed layer was known in the art (a) as a surface capable of electron transfer for nucleation of the copper material during electroless deposition and (b) as an adhesion layer to the underlying barrier layer or contact surface (Spec. ¶¶ [0006] and [0007]). Thus, Appellants’ invention includes a method for depositing a seed layer, particularly a ruthenium seed layer, and an electroless copper plating solution to achieve improved adhesion and improved copper plating properties (Spec. ¶¶ [0008] and [0022]). Claims 1, 6, 9, and 15 are illustrative: 1. A method for forming a conductive material within a feature on a substrate, comprising: forming a ruthenium seed layer selectively onto a contact surface within a feature on a substrate during a vapor deposition process, wherein sidewalls of the feature remain substantially free of the ruthenium seed layer during the vapor deposition process; and depositing a copper-containing layer on the ruthenium seed layer while filling the feature during an electroless deposition process. 6. The method of claim 2, wherein the electroless deposition process includes exposing the substrate to an electroless solution comprising a copper source and at least one additive selected from the group consisting of an accelerator, a suppressor, a leveler, and combinations thereof. 9. The method of claim 6, wherein a surface of the copper-containing layer adjoins the sidewall of the feature at an angle of less than 90° from the sidewall. 15. The method of claim 14, wherein the leveler is 1-(2-hydroxyethyl)-2- imidazolidinethione. Appeal 2011-000217 Application 11/385,038 3 The Examiner relies upon the following evidence: First Named Inventor Document No. Issue or Pub. Date Bickford Zhao Hong Gabe Hongo Tsao US 5,318,803 US 5,674,787 US 6,008,117 US 6,773,573 B2 US 7,033,463 B1 US 7,208,404 B2 Jun. 7, 1994 Oct. 7, 1997 Dec. 28, 1999 Aug. 10, 2004 Apr. 25, 2006 Apr. 24, 2007 Soininen US 2002/0004293 A1 Jan. 10, 2002 The Examiner maintains, and Appellants seek review of, the following rejections: 1. The rejection of claims 1-5, 16-18, 29, and 30 under 35 U.S.C. § 103(a) as unpatentable over Hong in view of Zhao, Bickford, and Soininen; 2. The rejection of claims 6-8, 19-21, 31, and 37 under 35 U.S.C. § 103(a) as unpatentable over all of the above cited references and further in view of Hongo; 3. The rejection of claims 9-14, 22-27, and 32-36 under 35 U.S.C. § 103(a) as unpatentable over all of the above cited references and further in view of Tsao; 4. The rejection of claim 38 under 35 U.S.C. § 103(a) as unpatentable over the references applied to claim 6 and further in view of Gabe; and 5. The rejection of claims 15 and 28 under 35 U.S.C. § 103(a) as unpatentable over all of the above cited references and further in view of Gabe. Appeal 2011-000217 Application 11/385,038 4 With respect to each of the rejections, Appellants address all the separately rejected claims as a group.1 Therefore, we decide this Appeal on the basis of claims 1, 6, 9, 15, and 38 for the respective rejections. II. DISCUSSION We adopt the Examiner’s findings in the Answer as our own and add any additional findings of fact appearing below for emphasis. A. ISSUE ON APPEAL With respect to claim 1, the Examiner acknowledges that the electroless copper plating process taught by Hong does not include a ruthenium seed layer as claimed (Ans. 5). Accordingly, the Examiner concludes that it would have been obvious for one of ordinary skill in the art to have modified Hong to include a copper seed layer as taught by Zhao because Zhao teaches catalyzing a bottom of a feature “for optimum electroless plating” (Ans. 7). Similarly, the Examiner concludes that one of ordinary skill in the art would have substituted the copper seed layer in the combined method of Hong and Zhao with a ruthenium seed layer because Bickford teaches that ruthenium and copper are both well-known and suitable seed layers for catalyzing a surface for copper electroless plating (Ans. 6-7). Finally, the Examiner concludes that one of ordinary skill in the art would have applied the ruthenium seed layer using a process in which a ruthenium oxide layer is applied by vapor deposition using ruthenium 1 Appellants point to some of the additional features recited in claims 16 and 29, and the claims depending therefrom together with a conclusory statement that the applied prior art does not teach these features (App. Br. 14 and 16- 20; Reply Br. 11, 12, 14-16, and 20). As correctly indicated by the Examiner, however, this summary presentation by Appellants is tantamount to merely setting forth what a particular claim recites and does not amount to a separate substantive argument for each of these claims (see, e.g. Ans. 21). Appeal 2011-000217 Application 11/385,038 5 tetroxide as a source and then reduced with a reductant comprising hydrogen to provide a ruthenium metal layer, as taught by Soininen to provide a desirable catalyzing surface (Ans. 6-7). With respect to claim 6, the Examiner concludes that it would have been obvious to one of ordinary skill in the art to add, for example, the leveler taught by Hongo to the copper electroless plating baths taught by Zhao, Hong, and/or Bickford for its known function as a leveler (see Ans. 8- 9; see Hongo, col. 7, ll. 5-40). With respect to claim 9, the Examiner concludes that it would have been obvious to one of ordinary skill in the art for the copper electroless plating to result in an angled surface with respect to the sidewall of the feature either as the result of the plating process following the uneven contour of the base or as a result of “dishing” that would occur during further processing, both of which are well-known phenomena described by Tsao (Ans. 10; see Tsao, col. 6, ll. 10-45 and Figures 4 and 5). With respect to claim 15, the Examiner concludes that it would have been obvious to one of ordinary skill in the art to substitute the particular leveler taught by Gabe as the leveler described by Hongo and Tsao in the electroless plating solutions described by Hong, Zhao and/or Bickford because Gabe describes that such levelers produce similar results (Ans. 13, see Gabe, col. 9, ll. 24-30). Appellants’ arguments are substantially directed to rebutting the Examiner’s rationales for concluding obviousness based on additional teachings of the prior art references (see generally App. Br.). Accordingly, the issue on appeal arising from the contentions of Appellants and the Examiner is: does the evidence support the Appellants’ Appeal 2011-000217 Application 11/385,038 6 view that the Examiner’s rationale is not sufficient when considering the teachings of the prior art references as a whole? We answer this question in the negative. A. CLAIM 1 Appellants question whether the skilled artisan would have applied a seed layer and selective electroless deposition of copper as taught by Zhao in the process taught by Hong when no such seed layer or selective deposition is required for successful electroless plating in Hong (App. Br. 10). The Examiner has provided a sufficient rationale for such an addition to the process of Hong, supported by the teachings of Zhao, that activation of a surface (a seed layer) provides for the autocatalytic reaction for the electroless plating of copper (Ans. 14). We find the Examiner’s position reasonable and well supported by the teachings of Zhao. Moreover, Appellants admit in the Specification that seed layers for electroless plating contact surfaces were well known in the art (Spec. ¶¶ [0006] and [0007]). Appellants cannot defeat an obviousness rejection with an argument directed to a claim feature which is acknowledged to be well known in the prior art. See Constant v. Advanced Micro-Devices, Inc., 848 F.2d 1560, 1570 (Fed. Cir. 1988) (“A statement . . . that something is in the prior art is binding on an applicant and patentee for determinations of anticipation and obviousness.”); In re Nomiya, 509 F.2d 566, 571 n.5 (CCPA 1975) (“[A] statement by an applicant, whether in the application or in other papers submitted during prosecution, that certain matter is ‘prior art’ to him, is an admission that that matter is prior art for all purposes.”). Likewise, the Examiner has provided sufficient rationale, supported by the teachings of Zhao (Zhao, col. 5, l. 50 to col. 6, l. 2), as to why the Appeal 2011-000217 Application 11/385,038 7 skilled artisan would choose to selectively deposit copper, specifically to avoid the subsequent mechanical polishing (CMP) away of the extra copper that extends above the feature, as taught by Hong (Ans. 14). Appellants’ do not convincingly rebut this finding or reasoning by the Examiner. Appellants further question whether a skilled artisan would have used a ruthenium seed layer in the process of Hong as modified by Zhao because Zhao teaches disadvantages to copper electroless plating when using palladium as a seed layer, specifically an increase in resistance and a decrease in stability of the copper deposit (App. Br. 12). Appellants further explain that ruthenium and palladium are both platinum group metals “which have many similar physical properties, chemical properties, and usually occur together in the same mineral deposits . . . while the physical and chemical properties of copper distinguishes those of palladium or ruthenium” (Reply Br. 6). We agree with the Examiner that Bickford provides sufficient evidence that ruthenium was known as an alternative to copper as a seed layer for copper electroless deposition, and that, accordingly, one of ordinary skill in the art would have expected success in using ruthenium as a seed layer for the electroless deposition of copper in the processes taught by Hong and Zhao (see e.g. Bickford, col. 4, ll. 35-37). Appellants present no convincing evidence that the chemical and physical properties of palladium or ruthenium are sufficiently similar that one of ordinary skill in the art would have been persuaded against using ruthenium over the teaching in Bickford that ruthenium was a known seed layer, by the reference to palladium in Zhao. Appellants’ attorney arguments do not take the place of evidence in the record. In re Pearson, 494 F.2d 1399, 1405 (CCPA 1974). Appeal 2011-000217 Application 11/385,038 8 Further, we agree with the Examiner that the disadvantages taught by Zhao do not rebut the teachings of Bickford, that palladium, ruthenium and copper all effectively function as seed layers for electroless plating of copper, but rather would have merely suggested reasons why palladium may not be as preferred as copper. In re Gurley, 27 F.3d 551, 552-3 (Fed. Cir. 1994) (“A known or obvious composition does not become patentable simply because it has been described as somewhat inferior to some other product for the same use. . . . [I]n general, a reference will teach away if it suggests that the line of development flowing from the reference’s disclosure is unlikely to be productive of the result sought by the applicant.”). Appellants also question the addition of the teaching of Soininen because Soininen does not teach the same copper electroless plating process disclosed in the teachings of Hong, Zhao, and Bickford, and, in fact, teaches that among alternative for depositing copper, a seed layer is “only needed for the electroplating process” (App. Br. 11) (citing Soininen, ¶ [0036]). We disagree that the skilled artisan would be persuaded against using the ruthenium deposition process taught by Soininen in the process of Hong as modified by the teachings of Zhao and Bickford. As discussed above, Appellants cannot dispute that it was known in the art to use a seed layer for electroless deposition, and the Examiner has provided sufficient evidence that a ruthenium seed layer would also be obvious for electroless deposition. Likewise, as pointed out by the Examiner, one of ordinary skill in the art would recognize that the benefits of depositing a ruthenium seed layer by the process of Soininen would have been advantageous, despite the process used for depositing the subsequent copper layer (Ans. 16 and 20; see Soininen, ¶¶ Appeal 2011-000217 Application 11/385,038 9 [0047] and [0048] (describing that the ALD deposition method for depositing ruthenium provides good adhesion, structural integrity, reduced pinhole formation, and excellent step coverage on features such as vias, trenches, etc.)). “[I]f a technique has been used to improve one device, and a person of ordinary skill in the art would recognize that it would improve similar devices in the same way, using the technique is obvious unless its actual application is beyond his or her skill.” KSR Int'l Co. v. Teleflex Inc., 550 U.S. 398, 417 (2007). Appellants also contend that Soininen teaches depositing the ruthenium oxide layer as an ALD process and not a chemical vapor deposition (CVD) process (App. Br. 11). Claim 1 recites that the ruthenium oxide be deposited by “a vapor deposition process,” and is not limited specifically to CVD. Further, the Examiner has found that the ALD deposition process is a type of vapor deposition (Ans. 16-17), a fact which is not contested by Appellants. See In re Eskild, 387 F.3d 987, 988 (CCPA 1968) (accepting as fact statements made by the Examiner to which Appellants have raised no challenge). Appellants also contend that Soininen does not teach reducing the ruthenium oxide layer using hydrogen, as claimed (App. Br. 12). Claim 1 recites only the deposition of a ruthenium seed layer “during a vapor deposition process” (claim 1). It is not until claim 3 where chemical reduction of the seed layer is recited, and it is not until claim 4 where particular reductants are recited (claims 3 and 4). Since Appellants do not present separate arguments with respect to claims 3 and 4, we need not address this argument. See 37 C.F.R. § 41.37(c)(1)(vii) (“When multiple claims subject to the same ground of rejection are argued as a group by Appeal 2011-000217 Application 11/385,038 10 appellant, the Board may select a single claim from the group of claims that are argued together to decide the appeal with respect to the group of claims as to the ground of rejection on the basis of the selected claim alone.”). Nonetheless, the Examiner has interpreted the language of claim 4 reciting “hydrogen, atomic hydrogen, [and] derivatives thereof,” as being met by the hydrogen radicals and hydrogen-containing molecules taught by Soininen (Ans. 18), an interpretation which is not convincingly contested by Appellants. B. CLAIMS 6, 9, 15, and 38 With respect to the additional teachings of Hongo, Appellants contend that Hongo teaches away from electroless plating because it teaches that an electroplating process is inefficient, and Appellants suggest a lack of obviousness because Zhao and Hongo are directed towards solving different problems, specifically copper layer initiation and plating rates, respectively (App. Br. 15). With respect to the additional teachings of Tsao, Appellants contend that Tsao teaches away from a seed layer of ruthenium because it teaches instead a seed layer of copper (App. Br. 17). With respect to the additional teachings of Gabe, Appellants contend that a lack of obviousness is suggested because Zhao and Gabe are directed towards solving different problems, specifically copper layer initiation and using a leveler in a plating bath (App. Br. 19; Reply Br. 17 and 19). We are not persuaded that the Examiner’s conclusions of obviousness are untenable based on Appellants’ arguments. In each case, the Examiner has provided sound reasoning based on facts presented in the prior art for Appeal 2011-000217 Application 11/385,038 11 concluding that claims 6, 9, 15 and 38, would have been obvious to the skilled artisan. We find no convincing evidence that Hongo or Tsao teaches away from any particular copper electroless plating technique either because it argues against an alternative process (electroplating) or because it teaches the use of an alternative seed layer. Neither argument is directed to the electroless copper plating techniques previously described by Hong, Zhao, and/or Bickford, to which the teachings of Hongo and Tsao are particularly applied. Likewise, we are not persuaded against the Examiner’s conclusions merely because the art addresses different problems from one another, where “any need or problem known in the field of endeavor at the time of invention and addressed by the patent can provide a reason for combining the elements in the manner claimed.” KSR, 550 U.S. at 420 (emphasis added). Such arguments do not specifically address the Examiner’s positions articulated in the Answer or explain why these positions are untenable. III. DECISION We affirm the Examiner’s decision. IV. TIME PERIOD FOR RESPONSE No time period for taking any subsequent action in connection with this appeal may be extended under 37 C.F.R. § 1.136(a). AFFIRMED cam Copy with citationCopy as parenthetical citation