Ex parte Sakuma et al.

Board of Patent Appeals and Interferences

Feb 26, 1998

08619418 (B.P.A.I. Feb. 26, 1998)

Application filed March 21, 1996. According to the1
appellants, it is a continuation of Application 08/420,335, filed
April 11, 1995, now abandoned, which is a continuation of
Application 08/243,585, filed May 16, 1994, now abandoned, which
is a division of Application 07/986,998, filed December 7, 1992,
now Patent No. 5,313,426.
1
THIS OPINION WAS NOT WRITTEN FOR PUBLICATION
The opinion in support of the decision being entered today
(1) was not written for publication in a law journal and
(2) is not binding precedent of the Board.
Paper No. 30
UNITED STATES PATENT AND TRADEMARK OFFICE
_____________
BEFORE THE BOARD OF PATENT APPEALS
AND INTERFERENCES
_____________
Ex parte SHINZO SAKUMA, and
SAMPEI MIYAMOTO
_____________
Appeal No. 97-4425
Application 08/619,4181
______________
ON BRIEF
_______________
Before KRASS, FLEMING and LEE, Administrative Patent Judges.
LEE, Administrative Patent Judge.
DECISION ON APPEAL
This is a decision on appeal under 35 U.S.C. § 134 from the
examiner's final rejection of claims 11-16, 18 and 19. Claims
1-10 have been canceled. Claim 20 has been allowed.
Reference Relied on by the Examiner
Appeal No. 97-4425
Application 08/619,418
2
Kohno et al. (Kohno) Patent No. 5,072,425 Dec. 10, 1991
Rejection on Appeal
Claims 11-16, 18 and 19 stand rejected under 35 U.S.C.
§ 102(b) as being anticipated by Kohno. Claim 17 has been
objected to as being dependent from a rejected claim.
The Invention
The invention is directed to sense amplifier drive circuits
in a semiconductor memory. The sense line and a conductor
element are connected to both a first node of a first sense
amplifier and the second node of a second sense amplifier. Both
the sense line and the conductor element are for transferring
control signals to the sense amplifiers. Representative
independent claims 11 and 19 are reproduced below.
11. A semiconductor memory device having a semiconductor
substrate having a major surface thereof, comprising:
a first pair of bit lines, formed over the major surface,
having first and second bit lines, said first pair of bit lines
being coupled to a first memory cell, said first memory cell
causing a first potential difference between said first and
second bit lines;
a second pair of bit lines, formed over the major surface,
having third and fourth bit lines, said second pair of bit lines
being coupled to a second memory cell, said second memory cell
causing a second potential difference between said third and
fourth bit lines;
a first sense amplifier having a first node, said first
sense amplifier being connected to the first pair of bit lines,
for amplifying the first potential difference between said first
Appeal No. 97-4425
Application 08/619,418
3
and second bit lines in response to a first sense amplifier
control signal during a sensing operation;
a second sense amplifier having a second node, said second
sense amplifier being connected to the second pair of bit lines,
for amplifying the second potential difference between said third
and fourth bit lines in response to the first sense amplifier
control signal during the sensing operation;
a first sense line connected to said first and second nodes
for transferring the first sense amplifier control signal to said
first and second sense amplifiers, said first sense line being
formed over the major surface; and
a first conductive element connected to said first and
second nodes and formed in the major surface, for transferring
the first sense amplifier control signal to both said first and
second sense amplifiers during the sensing operation.
19. A semiconductor memory device having a semiconductor
substrate having a major surface thereof, comprising:
a first pair of bit lines;
a second pair of bit lines;
a first sense amplifier having a first node, said first
sense amplifier being connected to the first pair of bit lines,
for amplifying a potential difference between said first pair of
bit lines in response to a sense amplifier control signal during
a sensing operation;
a second sense amplifier having a second node, said second
sense amplifier being connected to the second pair of bit lines,
for amplifying a potential difference between said second pair of
bit lines in response to the sense amplifier control signal
during the sensing operation;
a sense line connected to said first and second nodes for
transferring the sense amplifier control signal to said first and
second sense amplifiers, said sense line being formed over the
major surface; and
Appeal No. 97-4425
Application 08/619,418
4
a conductive element connected to the first and second nodes
for transferring the sense amplifier control signal to both said
first and second sense amplifiers during the sensing operation.
Opinion
Our opinion is based solely on the arguments made by the
appellants in their briefs. Arguments which could have been but
in fact are not made by the appellants are considered to be
waived and will not be considered or addressed.
Anticipation is established only when a single prior art
reference discloses, either expressly or under the principles of
inherency, each and every element of the claimed invention. In
re Spada, 911 F.2d 705, 708, 15 USPQ2d 1655, 1657 (Fed. Cir.
1990); RCA Corp. v. Applied Digital Data Sys., Inc., 730 F.2d
1440, 1444, 221 USPQ 385, 388 (Fed. Cir. 1984).
The issue in this case centers about whether Kohno discloses
"a first conductive element" as is recited in independent claim
11. According to claim 11, the first conductive element is
connected to the first and second nodes and is formed in the
"major surface" of the substrate. The function of the first
conductive element is to transfer control signals to the first
and second amplifiers during the sensing operation. The
Appeal No. 97-4425
Application 08/619,418
5
appellants assert (Reply at 3, lines 14-15) that in case there is
some delay along the sense line, control signals can still be
provided along the conductive element without incurring a delay.
On page 10 of the answer, the examiner identifies what he
considers to be the conductive element in Kohno, i.e., conductive
line element L32. However, as is discussed by Kohno in column
13, lines 49-60, conductive element L32 is formed in a second
wiring layer formed above the memory cell. Thus, the appellants
are correct that L32 is not formed on the major surface of the
substrate.
On page 11 of the answer, the examiner inexplicably switched
what he regards as the conductive element. Here, he regards the
unnamed connection between line L1 and the sense amplifier as the
conductive element. It is inappropriate to switch in mid-stream
without re-establishing all that is required of the conductive
element as claimed, e.g., connection to the first and second
nodes. What is true for L32 is not automatically true for the
unnamed segment connecting L1 to the sense amplifier. As is
shown in Kohno’s Figure 11, L32 and the unnamed element are
clearly different elements.
The appellants are correct that there is no basis for the
examiner to assume that the unnamed element connecting the line
Appeal No. 97-4425
Application 08/619,418
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L1 to the sense amplifier is formed "in the major surface" of the
semiconductor substrate. The examiner made no explanation as to
why it necessarily must be so. There is nothing to indicate that
this claimed feature is an inherent characteristic of Kohno. The
examiner has not articulated sufficient basis or pointed to
sufficient evidence to find that the unnamed conductive element
is formed "in the major surface" of the substrate. Note also
that from Figure 11 of Kohno, it does not appear that the unnamed
element extends in the same plane of the major surface of the
substrate. Accordingly, Kohno has not been shown to anticipate
claim 11 or the claims depending therefrom. A finding of
anticipation cannot be based on mere speculation or conjecture.
For the foregoing reasons, the rejection of claim 11 and
claims depending either directly or indirectly from claim 11
cannot be sustained.
Claim 19, on the other hand, does not require that the
conductive element be formed on the major surface of the
semiconductor substrate. Thus, the argument about the conductive
element being formed on the major surface of the semiconductor
substrate does not apply to claim 19.
With respect to independent claim 19, the appellants argue
that the claimed invention allows the sense amplifier control
Appeal No. 97-4425
Application 08/619,418
7
signals to be provided through both the sense line and the
conductive element such that if there is a delay along the sense
line at any contact point, those signals can still be provided
along the conductive element without a delay (Br. at 18, 19, 20;
Reply at 3). The appellants point out (Reply at 3, lines 8-15)
that this functionality and advantage is provided by having the
diffusion line (conductive element) connected directly to the
sense amplifiers and the sense line directly connected to a
number of metal diffusion contacts which are, in turn, connected
to the diffusion line or the conductive element. For instance,
in the brief on page 20, lines 4-10, the appellants state:
In Kohno et al., L32 [conductive element] is connected
to L1 which is directly connected to the sense amp. In
contrast, in the present invention, the sense line SLN
is connected to the sense amplifiers 140-1, for
example, by contacts C4 and C5 to line D2 [conductive
element], and to sense amplifier 140-2 by contacts C5
and C6 to D2 [conductive element]. Hence, in the
present invention, there are multiple contacts for the
sense line to connect to the sense nodes of both the
first amplifier and second amplifier. This prevents
the delays possible in Kohno et al. This cannot be
done with Kohno et al.
The argument, however, is not commensurate in scope with
what is claimed. First, the function or capability of providing
control signals through the conductive element without delay when
there is a delay along the sense line is not recited in claim 19.
Secondly, claim 19 does not require directly connecting the
Appeal No. 97-4425
Application 08/619,418
8
conductive element to the sense amplifiers. The language of the
claim is sufficiently broad to cover directly connecting the
sense line to the sense amplifiers and indirectly connecting the
conductive element to the sense amplifiers through the sense
line. The claim requires only that both the sense line and the
conductive element be connected to the first and second nodes.
The appellants argue (Reply at 2, lines 18-19) that the
examiner has provided no explanation as to how the conductive
element is connected to the first and second nodes. However, the
examiner clearly indicated that the first node is the node at the
intersection of L1 and L32 and that the second node is also the
node at the intersection of L1 and L32 (answer at 5, lines 7-8
and lines 13-14). Figure 8B of Kohno clearly illustrates that
the conductive line element L32 is connected to that common node.
The appellants have not argued that the first and second
nodes cannot be a common node. In any event, in light of this
specification, we agree with the examiner that the claim can
reasonably be interpreted such that the first and second nodes
can be a common node. Note first and second nodes S1 and S3 in
Figure 1 of the appellants’ specification, which are essentially
the same node by being directly connected to each other.
For the foregoing reasons, we sustain the rejection of claim
Appeal No. 97-4425
Application 08/619,418
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19.
Conclusion
The rejection of claims 11-16 and 18 under 35 U.S.C.
§ 102(b) as being anticipated by Kohno is reversed.
The rejection of claim 19 under 35 U.S.C. § 102(b) as being
anticipated by Kohno is affirmed.
No time period for taking any subsequent action in
connection with this appeal may be extended under
37 CFR § 1.136(a).
AFFIRMED-IN-PART
Appeal No. 97-4425
Application 08/619,418
10
ERROL A. KRASS )
Administrative Patent Judge )
)
)
) BOARD OF PATENT
MICHAEL R. FLEMING )
Administrative Patent Judge ) APPEALS AND
)
) INTERFERENCES
)
JAMESON LEE )
Administrative Patent Judge )
Appeal No. 97-4425
Application 08/619,418
11
Edward D. Manzo
Cook McFarron & Manzo LTD
135 S LaSalle Street, Suite 4100
Chicago, IL 60603