Ex Parte Mao et alDownload PDFPatent Trial and Appeal BoardNov 25, 201311915039 (P.T.A.B. Nov. 25, 2013) Copy Citation UNITED STATES PATENT AND TRADEMARKOFFICE UNITED STATES DEPARTMENT OF COMMERCE United States Patent and Trademark Office Address: COMMISSIONER FOR PATENTS P.O. Box 1450 Alexandria, Virginia 22313-1450 www.uspto.gov APPLICATION NO. FILING DATE FIRST NAMED INVENTOR ATTORNEY DOCKET NO. CONFIRMATION NO. 11/915,039 11/20/2007 Chuanbin Mao 22084-P005WOUS 2855 61060 7590 11/26/2013 WINSTEAD PC P.O. BOX 131851 DALLAS, TX 75313 EXAMINER NGUYEN, DUY T V ART UNIT PAPER NUMBER 2894 MAIL DATE DELIVERY MODE 11/26/2013 PAPER Please find below and/or attached an Office communication concerning this application or proceeding. The time period for reply, if any, is set in the attached communication. PTOL-90A (Rev. 04/07) UNITED STATES PATENT AND TRADEMARK OFFICE ________________ BEFORE THE PATENT TRIAL AND APPEAL BOARD ________________ Ex parte CHUANBIN MAO,1 Shan Tang, and Sanjay Banerjee ________________ Appeal 2011-001152 Application 11/915,039 Technology Center 2800 ________________ Before BRADLEY R. GARRIS, MARK NAGUMO, and MICHAEL P. COLAIANNI, Administrative Patent Judges. NAGUMO, Administrative Patent Judge. DECISION ON APPEAL Chuanbin Mao, Shan Tang, and Sanjay Banerjee (“Mao”) timely appeal under 35 U.S.C. § 134(a) from the final rejection2 of claims 1-17. 1 The real party in interest is listed as the Board of Regents, The University of Texas System. (Appeal Brief, filed 4 June 2010 (“Br.”), 1.) 2 Office action mailed 28 January 2010 (“Final Rejection”; cited as “FR”). App App We h rejec claim A. meth impr read to as layer para 3 Ap chap PCT prov as th eal 2011-0 lication 11 ave jurisd tions of th s. Introduc The subj ods of ma ove write/ -only mem “nanocry 116 and t .) See Fig {Fig. plication eronin pro /US2006/0 isional app e “039 Sp 01152 /915,039 iction. 35 e process tion3 ect matter king them erase/read ory (EEPR stals,” to fo he control ure 1, repr 1 shows a 11/915,039 teins, file 19713, fil lication fi ecification U.S.C. § claims, bu O on appeal . Accordin times in e OM) by e rm a float oxide 114 oduced be flash mem , Nanopa d 20 Nove ed 22 May led 23 Ma ,” and is c 2 6. We affi t affirming PINION relates to g to the S lectrical er mbedding ing gate 1 in flash m low: ory cell w rticles in a mber 2007 2006, cla y 2005. T ited as “Sp rm-in-part the reject flash drive pecificatio asable and “quantum 10 betwee emory 10 ith floatin flash mem as the nat iming the he specific ec.” , reversing ions of the memorie n, it is kn programm dots,” als n the tunn 0. (Spec. g gate 110 ory using ional phas benefit of ation is re the product s and own to able o referred eling oxid 1, last } e of a ferred to e Appeal 2011-001152 Application 11/915,039 3 In this embodiment, the flash memory further comprises two active regions, the N+ source 102 and the N+ drain 104, embedded in a p-type substrate 106.4 According to the Specification, in the prior art methods of aerosol deposition, direct chemical vapor deposition, and precipitation methods, “nanocrystal size and position distribution cannot be controlled.” (Spec. 2, 1st para.) As a result, device performance, scalability, and manufacture are said to be limited. (Id.) The crux of the claimed invention is said to be an improved method of forming the floating gate by using chaperone molecules, such as chaperonin proteins. The Specification teaches that chaperonin proteins assemble to form structures 201 having a central cavity within which a protein substrate may be bound. In the claimed method, the protein complexes without a protein bound in the cavity are assembled in a substantially uniform ordered array on a substrate, as shown in Figure 2, reproduced on the following page. The array of empty chaperonin proteins is then exposed to a solution containing semiconductor nanocrystals, which fill the cavities of the proteins, forming an ordered array of nanocrystals in a protein lattice 202 on the oxide layer of the substrate. The protein may then be removed (e.g., by high temperature thermal annealing (Spec. 5, l. 1), or by oxidation at high temperature (id. at 6, ll. 1-2), leaving the nanocrystals in an ordered array 203 on the oxide layer of the substrate. Fabrication of the flash memory continues by standard methods. (Id. at ll. 3-8.) 4 Throughout this Opinion, for clarity, labels to elements in figures are shown in bold font, regardless of their presentation in the original document. Appeal 2011-001152 Application 11/915,039 4 {Fig. 2 is shown below} {Figure 2 shows steps to form an array of quantum dots (nanocrystals)} Claim 1 is representative of the process claims, and reads: A method for fabricating a flash memory device comprising the steps of: defining active areas in a substrate; forming an oxide layer on said substrate; forming a protein lattice on top of said oxide layer, wherein said protein lattice comprises a plurality of molecular chaperones; trapping nanocrystals in said protein lattice; and forming a substantially uniform distribution of nanocrystals upon removal of said protein lattice. (Claims App., Br. 27; some indentation and emphasis added.) Independent claim 17 is a process claim that is somewhat broader than claim 1. Appeal 2011-001152 Application 11/915,039 5 Claim 9, which is representative of the device claims, is in product- by-process form, and reads: A memory device comprising: a substrate; a source and a drain region separated by a channel region in said substrate; a tunneling oxide layer formed on said substrate; and a substantially uniform distribution of nanocrystals formed on said tunneling oxide layer, wherein said substantially uniform distribution of nanocrystals is formed using a protein lattice comprising a plurality of molecular chaperones configured to trap said nanocrystals. (Claims App., Br. 28; indentation and emphasis added.) Independent claim 16 is a product-by-process claim that is somewhat broader than claim 9. Appeal 2011-001152 Application 11/915,039 6 The Examiner maintains the following grounds of rejection:5 A. Claims 1-5, 7-13, 15, and 17 stand rejected under 35 U.S.C. § 103(a) in view of the combined teachings of Black6 and Trent.7 A1. Claims 6 and 14 stand rejected under 35 U.S.C. § 103(a) in view of the combined teachings of Black, Trent, and Nunoshita.8 B. Claim 16 stands rejected under 35 U.S.C. § 103(a) in view of the combined teachings of Black. B. Discussion Findings of fact throughout this Opinion are supported by a preponderance of the evidence of record. Initially, we find that Mao presents substantially the same arguments for patentability of the process claims and the product-by-process claims. 5 Examiner’s Answer mailed 25 August 2010 (“Ans.”). 6 Charles T. Black and Kathryn Wilder Guarini, Nonvolatile memory device using semiconductor nanocrystals and method of forming same, U.S. Patent Application Publication 2004/0256662 Al (2004). 7 Jonathan D. Trent et al., Ordered biological nanostructures formed from chaperonin polypeptides, U.S. Patent Application Publication 2005/0130258 Al (16 June 2005), based on an international application filed 8 November 2002. 8 Masahiro Nunoshita et al., Method of production of nano particle dispersed composite material, U.S. Patent Application Publication 2005/0042386 Al (24 February 2005), based on an application filed 10 June 2004. App App mak (FR Fig. {F The copo prote both nano nano poly hexa elect eal 2011-0 lication 11 The Exa ing a flash 2-8; Ans. 3 4I, only la ig. 1(b) sh Examiner lymer self ins can be citing Bla meter-sca particles c (methyl m gonally cl ron micro 01152 /915,039 miner find memory d -9.) Fig. rger, and l ows a flash finds furth -assembly used in p ck [0094]. le holes in an be trap ethacrylate ose-packed graph imag Proc s that Blac evice 150 1(b), show abeled. memory er that Bla , and that B lace of the ) The dibl porous sil ped; see F ) (PMMA pores in e in Fig. 2 7 ess claims k describe having a n n below, s device wit ck provid lack teac diblock co ock copol icon on an igs 4A-4G ) diblock a thin poly A, and Bl s, in Figs. anocrysta hows the h a nanoc es an exam hes that se polymers ymers form oxide lay ; in Fig. 4C copolymer mer film. ack [0130 4A-4I, a p l floating same featu rystal float ple based lf-assemb . (FR 10; a pattern er, in whic , polysty s form an (See the s ]-[0132].) rocess of gate 156. res as ing gate} on diblock ling Ans. 12, of h rene (PS)- array of canning App App chap the m nano {Fig and 2 cavit (step chap mann eal 2011-0 lication 11 The Exa erones to f olecular c crystals in . 14 shows Trent sh ; [0157]), ies of the 4; [0156] The Exa eronins tau er taught 01152 /915,039 miner find orm a pro haperones an ordere the forma ows chape selectivel chaperonin , teaching miner con ght by Tr by Black. s that Tren tein lattice , and remo d array, as tion of an chaper ronins form y depositin s (step 3; removal o cludes that ent to form (E.g., FR 8 t teaches on a subs ving the p shown sc array of n onin prote ing a tem g nanocry [0159]), a f the prote it would h an ordere 4; Ans. 5. the use of trate, trapi rotein latt hematicall anocrystal ins plate on a stals or qu nd removi ins by usin ave been d lattice o ) molecular ng nanocr ice, leavin y in Fig. 1 s on a sub substrate antum do ng the cha g a protea obvious to f nanocry ystals in g the 4, below. strate usin (steps 1 ts in the peronins se). use the stals in the g Appeal 2011-001152 Application 11/915,039 9 Mao argues that neither the teaching in Trent [0011] of forming higher order structures nor the teachings at [0155]-[0159] (which describe the steps illustrated in Fig. 14) suggest forming a substantially uniform distribution of nanocrystals upon removal of the protein lattice. (Br. 4-10.) This argument is not particularly germane to the Examiner’s rejection, which relies on the combined teachings of Black and Trent; we therefore do not find it persuasive of harmful error in the Examiner’s rejection. Mao argues further that the proposed modifications to Black would render Black unsuited for Black’s intended purpose of transferring a nanoscale pattern into an oxide layer by an RIE (reactive ion etching) process, and forming nanocrystals in the nanometer-scale holes. (Br. 11-12.) We find this argument persuasive of harmful error as to the process claims. The Examiner has not directed our attention to any disclosure in Black suggesting that continuing with the process described by Trent, i.e., filling the cavities in the chaperonin proteins with nanocrystals, would serve any useful purpose in a process taught by Black. That is, following the formation of the ordered chaperonin lattice on the oxidized silicon substrate, the artisan, following Black, would transfer the resulting pattern to the oxide substrate by a process such as reactive ion etching. The artisan would subsequently remove the chaperonins before forming the nanocrystals in the wells in the silicon oxide layer. Thus, the Examiner has failed to show that the required step in the appealed process claims of “trapping nanocrystals in said protein lattice” would have been suggested or obvious in view of the combined teachings of Black and Trent. Appeal 2011-001152 Application 11/915,039 10 The Examiner’s analyses of the remaining process claims do not cure this fundamental deficiency, and we therefore reverse all the rejections of the process claims, namely claims 1-8 and 17. Product-by-process claims The remaining claims are claims to a product in which at least one limitation is the presence of “a substantially uniform distribution of nanocrystals formed on said tunneling oxide layer, wherein said substantially uniform distribution of nanocrystals is formed using a protein lattice.” (Claims App., Br. 28 (claim 9) and 28-29 (claim 16).) Claim 16 differs from claim 9 in that claim 16 does not require the presence of a source and a drain, and by not requiring that the protein lattice comprise “a plurality of molecular chaperones configured to trap said nanocrystals.” It is well-settled that “[i]f the product in a product-by-process claim is the same as or obvious from a product of the prior art, the claim is unpatentable even though the prior product was made by a different process.” SmithKline Beecham Corp. v. Apotex Corp., 439 F.3d 1312, 1317, 78 USPQ2d 1097, 1100 (Fed. Cir. 2006), quoting In re Thorpe, 777 F.2d 695, 697, 227 USPQ 964, 966 (Fed. Cir. 1985). Moreover, “when the PTO shows sound basis for believing that the products of the applicant and the prior art are the same, the applicant has the burden of showing that they are not.” In re Spada, 911 F.2d 705, 708, 15 USPQ2d 1655, 1658 (Fed. Cir. 1990). In the present case, comparison of the partial memory element shown by Black in Figure 4I, reproduced by the Examiner (FR 6, rejecting claim 9; Appeal 2011-001152 Application 11/915,039 11 FR 10, rejecting claim 16; Ans. 7, 11), or Black Figure 1(b), supra, with the memory element shown in Figure 1 of the 039 Specification shows that all of the elements recited in claims 9 and 16 are present. This impression is strengthened by even a cursory review of Black, e.g., the array of holes shown by Black in the exemplified version of the diblock copolymer film shown in Figure 2A, and of the corresponding photomicrographs shown by Trent of model systems, such as Trent Figure 8, (gold nanoparticles binding to chaperonin arrays) and Trent Figure 9, (semiconductor nanoparticle arrays). Although the method by which the nanocrystal floating gate is prepared by Black differs from the method recited in claim 9 and in claim 16, the method required by the appealed claims, “using a protein lattice,” is so broad that, on the present record, it is fair to transfer the burden to Mao to explain why the resulting structure is distinct from that described by Black. In view of the Examiner’s citation and reproduction of Black Figure 4I, which shows all the relevant structures, we consider the Examiner’s further attempt to show that the recited process steps would have been obvious to be harmless error. In this regard, we find that the 039 Specification does not contain any working examples or microphotographs of the chaperonin protein arrays or the nanocrystal floating gates formed from the “substantially uniform arrays” of nanocrystals formed using those chaperonins. Mao’s arguments in the Brief and in the Reply,9 that the processes of forming the nanoparticle floating gates differ, does not establish that the structures resulting from Black’s process, modified by using chaperonin proteins in place of diblock 9 Reply Brief filed 8 October 2010 (“Reply”). Appeal 2011-001152 Application 11/915,039 12 copolymers for the same ultimate purpose, differ in any patentably distinct way from devices formed by the steps recited in the claims. Similarly, Mao’s arguments regarding dependent product claims 11-14 focus on the differences in the recited process limitations. Mao does not argue, let alone establish, that the resulting structures are patentably distinct. We conclude that Mao has not shown harmful error in the Examiner’s rejection of the product claims. C. Order We reverse the rejection of claims 1-5, 7, 8, and 17 in view of the combined teachings of Black and Trent. We reverse the rejection of claim 6 in view of the combined teachings of Black, Trent, and Nunoshita. We affirm the rejection of claims 9-13 and 15 in view of the combined teachings of Black and Trent. We affirm the rejection of claim 14 in view of the combined teachings of Black, Trent, and Nunoshita. We affirm the rejection of claim 16 in view of Black. No time period for taking any subsequent action in connection with this appeal may be extended under 37 C.F.R. § 1.136(a). AFFIRMED-IN-PART kmm Copy with citationCopy as parenthetical citation