Ex Parte BlonkowskiDownload PDFPatent Trial and Appeal BoardJun 29, 201613435304 (P.T.A.B. Jun. 29, 2016) Copy Citation UNITED STA TES p A TENT AND TRADEMARK OFFICE APPLICATION NO. FILING DATE 13/435,304 03/30/2012 117574 7590 07/01/2016 ADDMG - ST (foreign-originated only) 255 S Orange Avenue, Suite 1401 Orlando, FL 32801 FIRST NAMED INVENTOR Serge Blonkowski UNITED STATES DEPARTMENT OF COMMERCE United States Patent and Trademark Office Address: COMMISSIONER FOR PATENTS P.O. Box 1450 Alexandria, Virginia 22313-1450 www .uspto.gov ATTORNEY DOCKET NO. CONFIRMATION NO. 54701 (ll-GR3-0096US01) 3624 EXAMINER HAGAN, CHRISTINE LAU ART UNIT PAPER NUMBER 2897 NOTIFICATION DATE DELIVERY MODE 07/01/2016 ELECTRONIC Please find below and/or attached an Office communication concerning this application or proceeding. The time period for reply, if any, is set in the attached communication. Notice of the Office communication was sent electronically on above-indicated "Notification Date" to the following e-mail address( es): creganoa@addmg.com PTOL-90A (Rev. 04/07) UNITED STATES PATENT AND TRADEMARK OFFICE BEFORE THE PATENT TRIAL AND APPEAL BOARD Ex parte SERGE BLONKOWSKI 1 Appeal2015-001699 Application 13/435,304 Technology Center 2800 Before MICHAEL J. STRAUSS, DANIEL N. FISHMAN, and JAMES W. DEJMEK, Administrative Patent Judges. DEJMEK, Administrative Patent Judge. DECISION ON APPEAL Appellant appeals under 35 U.S.C. § 134(a) from a Final Rejection of claims 15--43. Claims 1-14 have been canceled. App. Br. 15. We have jurisdiction over the remaining pending claims under 35 U.S.C. § 6(b ). We affirm. 1 Appellant identifies STMicroelectronics (Crolles 2) SAS as the real party in interest. App. Br. 1. Appeal2015-001699 Application 13/435,304 STATEMENT OF THE CASE Introduction Appellant's invention is directed to the use of an at least partially ionic crystal between two electrically conductive portions. Abstract. "The crystal may include at least one surface region coupled to the two electrically conductive portions. The surface region is insulating under the application of an electrical field to the surface region, and electrically conductive in the absence of the electrical field." Abstract. Claim 15 is representative of the subject matter on appeal and is reproduced below with the disputed limitation emphasized in italics: 15. A method for controlling electrical conduction between two electrically conductive portions, the method comprising: selectively applying an electrical field to at least one surface region of a partially ionic crystal positioned between and coupled to the two electrically conductive portions, the at least one swface region being insulating when an electrical field is applied to the at least one suiface region and electrically conductive in an absence of the electrical field, the electrical field being selectively applied to control the electrical conductivity thereof. The Examiner's Rejections 1. Claims 15-19, 21-26, 29-34, and 36-41 stand rejected under 35 U.S.C. § 103(a) as being unpatentable over Hoffman et al. (US 2005/0199879 Al; Sept. 15, 2005) ("Hoffman"). 2 Final Act. 2-9. 2 The Examiner alternatively rejects these claims under 35 U.S.C. § 102(b) as anticipated by Hoffman. Final Act. 2. 2 Appeal2015-001699 Application 13/435,304 2. Claims 20 and 35 stand rejected under 35 U.S.C. § 103(a) as being unpatentable over Hoffman and Itai (US 2010/0059746 Al; Mar. 11, 2010 (filed Aug. 24, 2009)). Final Act. 9-10. 3. Claims 27, 28, 42, and 43 stand rejected under 35 U.S.C. § 103(a) as being unpatentable over Hoffman and Mikawa et al. (US 2011/0114912 Al; May 19, 2011 (PCT filed Feb. 9, 2009)) ("Mikawa"). Final Act. 10-12. Issues on Appeal 1. Did the Examiner err in finding Hoffman teaches or suggests the disputed limitation recited in claim 15? 2. Did the Examiner err in relying on the proposed combination of Hoffman and Itai to teach or suggest "the at least partially ionic crystal comprises an alkaline halide," as recited in claim 20? 3. Did the Examiner err in relying on the proposed combination of Hoffman and Mikawa to teach or suggest "forming an interconnect layer above the semiconductor substrate; and wherein forming the switching device comprises forming the switching device in the interconnect layer," as recited in claim 27? 3 Appeal2015-001699 Application 13/435,304 ANALYSIS 3 Claims 15-19, 21-26, 29-34, and 36--41 Appellant contends the Examiner erred in finding Hoffman teaches or suggests, inter alia, the disputed limitation ofclaim 15. App. Br. 7-12; Reply Br. 2--4. As claimed, the application of an electrical field is used to control the electrical conductivity of at least one surface region of an at least partially ionic crystal. See, e.g., claim 15. When an electrical field is applied, the at least one surface region is electrically insulative. Id. In the absence of an electrical field being applied, the at least one surface region is electrically conductive. Id. The Examiner refers to Appellant's configuration as "normally on." Final Act. 3; Adv. Act. 2; Ans. 3--4. In other words, a device manufactured or operated as claimed would be conductive, i.e., "on," even when no electrical field is applied and would be insulating, of "off," when an electrical field is applied. This is consistent with Appellant's disclosure of the device "is therefore like a switch making it possible to establish, or not, an electrical link between these two electrically conductive portions." Spec. i-f 20. Similarly, a device could be "normally off." A "normally off' device would be insulating (i.e., "off') when no electrical field is applied and electrically conductive (i.e., "on") when an electrical field is applied. The Examiner finds, and we agree, "[b ]oth 'normally on' and 'normally off configurations of transistors are well known in the art and 3 Throughout this Decision, we have considered the Appeal Brief filed June 6, 2014 ("App. Br."); the Reply Brief filed October 8, 2014 ("Reply Br."); the Examiner's Answer mailed on August 15, 2014 ("Ans."); and the Final Office Action mailed on December 24, 2013 ("Final Act."), from which this Appeal is taken. 4 Appeal2015-001699 Application 13/435,304 used for various applications." Adv. Act. 2. Appellant concedes these two configurations, "normally on" and "normally off," may be known. App. Br. 11. However, Appellant argues, although a transistor may be "on" or "off," there are "an infinite number of ways to make a transistor operate as either an 'on' or 'off."' Reply Br. 4. The Examiner finds, and Appellant agrees, Hoffman "uses an applied voltage to control conductivity of the channel [ (of the disclosed semiconductor device)]." Reply Br. 2 (emphasis omitted); Final Act. 2-3 (citing Hoffman i-fi-16, 11, 35, 25, Fig. IF). The Examiner finds "it would have been obvious to a person of ordinary skill in the art to have the at least one surface region be 'normally on' because a person of ordinary skill would be compelled to try either on/off configuration." Appellant contends Hoffman is the "exact opposite of the claimed invention" and the Examiner fails "to articulate a reasoning as to why a person skilled in the art would be compelled to 'try either on/ off configuration."' App. Br. 8-10. We find Appellant's arguments unpersuasive of Examiner error. Contrary to Appellant's assertions, Hoffman is not the "exact opposite" of the claimed invention. Rather, Hoffman teaches "[ t ]he voltage applied at the gate electrode 104 can vary the ability of the channel 108 to conduct the electrical charge and thus, the electrical properties of the channel 108 can be controlled, at least in part, through the application of a voltage at the gate electrode 104." Hoffman i-f 12. We find this is consistent with Appellant's claimed invention. See Spec. i1 3 ("controlling the electrical conduction between two electrically conductive portions ... application of an electrical 5 Appeal2015-001699 Application 13/435,304 field to the at least one surface region may reduce or establish the electrical conduction"). Further, although there may be many ways to make a transistor operate as either on or off, that does not change the Examiner's finding that a transistor may be either normally on (i.e., electrically conductive in the absence of the application of an electrical field) or normally off (electrically insulative in the absence of the application of an electrical field). Ans. 3--4. Additionally, Hoffman teaches the semiconductor devices (i.e., transistors) may be used in a variety of applications. See, e.g., Hoffman i-fi-128, 52. Thus, we agree with the Examiner that normally on and normally off configurations constitute a finite number of identified predictable potential solutions to be used, as appropriate, in the different applications taught or suggested by Hoffman. See Ans. 4; see also KSR Int 'l Co. v. Teleflex, Inc., 550 U.S. 398, 421 (2007). We find, in accordance with the holdings in KSR, it would be obvious to the skilled artisan "to try either on/off configuration." Ans. 4. For the reasons discussed supra, we are unpersuaded of Examiner error. Accordingly, we sustain the Examiner's rejection of claim 15, and, for similar reasons, the rejection of independent claims 21, 29, and 36, which contain similar limitations and were not argued separately. App. Br. 12. Further we sustain the rejection of dependent claims 16-19, 22-26, 30-34, and 37--41, which were not argued separately. Claims 20 and 35 In relevant part, claim 20 recites "wherein the at least partially ionic crystal comprises an alkaline halide." Appellant argues "[t]he Examiner 6 Appeal2015-001699 Application 13/435,304 failed to articulate why a person having ordinary skill in the art would tum to Itai' s alkaline halide (over all other materials) or what the results of the combination would be." App. Br. 12-13. We are unpersuaded of Examiner error because, as the Examiner explains: In the relevant portions of Itai, Itai provides a list of various materials which may be used to transport electrons. Itai recites, "Preferable examples of the material used in this layer include alkali metal salts such as lithium fluoride, lithium chloride, lithium bromide, other lithium salts, sodium fluoride, sodium chloride and cesium fluoride, and insulating metal oxides such as lithium oxide, aluminum oxide, indium oxide and magnesium oxide." Hoffman et al. is directed towards semiconductor devices having a channel that includes at least one of MgO and CdO. As can be seen, MgO is listed as one of the exemplary insulating metal oxide materials recited by Itai. It is clear in this context that alkali metal salts and insulating metal oxides, such as those listed by Itai, have similar electrical properties that would allow them both to transport charge from one location to another. Thus, at the time of the invention, it \~1ould have been obvious to a person of ordinary skill in the art to use any of materials listed by Itai as a part of the channel 108 taught by Hoffman. Ans. 7. We agree with the Examiner's finding that "[a]t the time of the invention, it would have been obvious to a person of ordinary skill in the art to have the at least partially ionic crystal comprise an alkaline halide as this constitutes simple substitution of one known element for another to obtain predictable results." Final Act. 10. Thus, we find no error in the Examiner's rejection of claim 20. Accordingly, we sustain the Examiner's rejection of claim 20 together with the rejection of dependent claim 35, which was not argued separately. App. Br. 13. 7 Appeal2015-001699 Application 13/435,304 Claims 27, 28, 42, and 43 Claim 27 recites, in relevant part, "forming an interconnect layer above the semiconductor substrate; and wherein forming the switching device comprises forming the switching device in the interconnect layer." Appellant argues "the Examiner's combination of references is improper as a person having ordinary skill in the art would not tum to a nonvolatile semiconductor memory device [(as taught by Mikawa)] to combine with a thin-film transistor for use in LCD screens [(as taught by Hoffman)]." App. Br. 13. The Examiner finds, and we agree, "[t]he devices disclosed by Hoffman et al. are clearly pertinent to transistor switches." Ans. 8 (citing Hoffman i-f 28). The Examiner finds that transistor switches are equally applicable in both display device and memory devices. Ans. 8. Appellant does not persuasively rebut the Examiner's finding. Accordingly, we sustain the Examiner's rejection of claim 27 together with the rejection of dependent claims 28, 42, and 43, which were not argued separately. App. Br. 14. DECISION We affirm the Examiner's decision to reject claims 15--43. No time period for taking any subsequent action in connection with this appeal may be extended under 37 C.F.R. § 1.136(a)(l )(iv). AFFIRMED 8 Copy with citationCopy as parenthetical citation